Optimising ALD high-k oxides for novel applications

Dr Uwe Schroeder and Dr Harm Knoops will disuss the ALD of ferroelectric HfO2 for novel memory applications and the tuning properties of TiO2 and HfO2 by substrate biasing during Plasma ALD.

The webinar will comprise of two talks, with a Q&A session at the end.

Presenter
Dr Harm Knoops
Atomic Scale Segment Specialist
Oxford Instruments Plasma Technology
Presenter
Dr Uwe Schroeder
Deputy Scientific Director
NaMLab GmBH

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